9 April 1985 Thermal Annealing Behavior Of Hydrogen-Free Amorphous Silicon And Germanium
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Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946490
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States
Abstract
Recent work has demonstrated that the infrared properties (refractive index and absorption) of amorphous silicon and germanium prepared by ion implantation depend upon the low temperature thermal annealing history (1500C<T<6000C). This thermal relaxation phenomenon is the subject of this review. The data suggest the change in refractive index is caused by a structural reorganization of a continuous random network but that changes in absorption and spin density are chiefly caused by the annealing of defects within the amorphous structure.
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Graham K. Hubler, Edward P. Donovan, Kou-Wei Wang, William G. Spitzer, "Thermal Annealing Behavior Of Hydrogen-Free Amorphous Silicon And Germanium", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946490; https://doi.org/10.1117/12.946490
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