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9 April 1985 Ultra-High-Resolution Dose Uniformity Monitoring With Thermal Waves
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Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946488
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States
Abstract
We demonstrate the ability of thermal-wave techniques to nondestructively measure ion-implanted dose and dose uniformity on the same spatial scale as the implanted features of micro-electronic devices. We present results on the variation of the thermal-wave signal with implanted dose, ion energy, surface oxide thickness, and silicon substrate resistiv-ity. We demonstrate ion dose measurements over the 1011 -1015 ions/cm2 range, automatic wafer mapping of ion dose uniformity, and measurement of dose variations on actual integrated circuit features. The attributes of this measurement technique make it particularly suited for production monitoring of ion implantation, especially in the critical threshold-voltage-adjust implant regime.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W.Lee Smith, Michael W. Taylor, and John Schuur "Ultra-High-Resolution Dose Uniformity Monitoring With Thermal Waves", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946488
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