9 April 1985 Use Of Thermal Waves To Measure Dose And Uniformity Of Si+ And Be+ Implants Into GaAs
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Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946486
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States
Abstract
We report a new method for the determination of ion-implanted dose and uniformity of n-type and p-type dopants in GaAs. The technique, employing thermal waves, is noncontact and nondestructive and therefore particularly attractive for monitoring production wafers for GaAs IC production. We demonstrate dose measurements over the 1012 -1015 ions/cm2 range, contour mapping of implanted dose on a GaAs wafer, and dose measurements on discrete circuit elements of micron spatial scale on a GaAs FET.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W.Lee Smith, W.Lee Smith, R. A. Powell, R. A. Powell, John D. Woodhouse, John D. Woodhouse, } "Use Of Thermal Waves To Measure Dose And Uniformity Of Si+ And Be+ Implants Into GaAs", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946486; https://doi.org/10.1117/12.946486
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