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9 April 1985 Xenon Irradiation-Induced Changes In CrSi2 Thin Films
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Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946477
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States
Abstract
Measurements of electrical resistivity are used to monitor changes in CrSi2 thin films induced by Xe irradiation over a fluence range of ≈ 1010 - 1014 cm-2. Behavior associated with defect generation and recombination are evident at high fluences. A temperature dependence at low fluences is reported and tentatively identified.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
X-A. Zhao, T. C. Banwell, and M-A. Nicolet "Xenon Irradiation-Induced Changes In CrSi2 Thin Films", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946477
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