Paper
2 April 1985 Electro-Optic Sampler For Gallium Arsenide Integrated Circuits
B. H. Kolner, K. J. Weingarten, D. M. Bloom
Author Affiliations +
Proceedings Volume 0533, Ultrashort Pulse Spectroscopy and Applications; (1985) https://doi.org/10.1117/12.946553
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States
Abstract
We report a new technique for directly sampling electrical waveforms in GaAs integrated circuits with picosecond time resolution. This noninvasive sampling system provides a powerful new tool for the design and diagnosis of GaAs integrated circuits. The technique is based on the intrinsic electro-optic effect in GaAs and utilizes a mode-locked and compressed Nd:YAG laser to electro-optically sample the fringing fields of microstrip transmission lines in GaAs integrated circuits. The frequency doubled output of the laser can be used to excite on-chip photodetectors which serve as test signal generators, or the circuits can be driven by external signal generators. We also demonstrate how the sampling system can be operated as a harmonic mixer for evaluation of pulse-to-pulse timing jitter in mode-locked lasers.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. H. Kolner, K. J. Weingarten, and D. M. Bloom "Electro-Optic Sampler For Gallium Arsenide Integrated Circuits", Proc. SPIE 0533, Ultrashort Pulse Spectroscopy and Applications, (2 April 1985); https://doi.org/10.1117/12.946553
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Gallium arsenide

Picosecond phenomena

Integrated circuits

Electro optics

Photodiodes

Nd:YAG lasers

Mode locking

Back to Top