2 April 1985 Picosecond Ingaas PIN Photodiode For 0.95um-1.65um Operation
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Proceedings Volume 0533, Ultrashort Pulse Spectroscopy and Applications; (1985) https://doi.org/10.1117/12.946550
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States
Abstract
A low dark current, high speed InGaAs PIN photodiode suitable for optoelectroinc integration has been fabricated by LPE method on sem-insulating InP substrate. The photodiode has a low dark current density of 2.5x10-6A/cm2 at -10V. At the operating voltage of -5V, external quantum efficiency of >90% at 1.3um and >83% at 1.55um, a rise time of <35ps and a FWHM of <45 ps have been measured. The approach and limitations to the design of a higher speed PIN photodiode will be discussed. The importance of packaging is emphasized, and pulse distortion due to dispersion in miscrostrip line will be discussed.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenneth K. Li, H.David Law, "Picosecond Ingaas PIN Photodiode For 0.95um-1.65um Operation", Proc. SPIE 0533, Ultrashort Pulse Spectroscopy and Applications, (2 April 1985); doi: 10.1117/12.946550; https://doi.org/10.1117/12.946550
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