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20 June 1985 A High Performance Negative X-Ray Resist : CPMS-X(Pd)
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The characteristics of CPMS (chlorinated polymethylstyrene) to Pd Loc were investigated to obtain the high performance negative x-ray resist. From the results, the high sensitive x-ray negative resist (Dg0.5=17mJ/cm2), CPMS-X(Pd), were obtained by determining both the optimum molecular weight and the optimum chlorine content to Pd Loc. It was found that this resist also has both high contrast and high dry etching resistivity. This resist can be believed to be a milestone for practical use of x-ray lithography for future VLSI devices.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nobuyuki Yoshioka, Yoshiki Suzuki, and Teruhiko Yamazaki "A High Performance Negative X-Ray Resist : CPMS-X(Pd)", Proc. SPIE 0537, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV, (20 June 1985);

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