20 June 1985 Submicron Pattern Fabrication By Focused Ion Beams
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In order to develop new generation VLSI devices ( 4 - 16 M Dynamic RAMS ), a submicron fabrication technology is strongly desired. With conventional optical lithography methods, there is a inherent limit of 0.5 - 0.7 μm linewidths. Focused Ion Beam ( FIB ) lithography is expected to emerge in the future because of its many advantages for submicron lithography. Both a submicron Si MOSFET with a high switching speed and a GaAs MESFET with a 0.25 μm gate have been fabricated using FIB lithography technology.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Kato, H. Morimoto, H. Nakata, "Submicron Pattern Fabrication By Focused Ion Beams", Proc. SPIE 0537, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV, (20 June 1985); doi: 10.1117/12.947501; https://doi.org/10.1117/12.947501

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