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20 June 1985 The Time Has Come For X-Ray Lithography
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Abstract
The era is fast approaching when light optics must utilize all of its options; higher numerical aperture lens, shorter wavelength and partially coherent illumination along with process aids such as multilevel resist processes, to name a few. The relative production process difficulty of light optics and x-ray become equivalent in the 1.25μm regime. With x-ray relieving the imposed limitations of diffraction coupled with recent advances in x-ray sources, masks, alignment techniques and photoresists, it is now time to begin serious x-ray process development.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard L. Ruddell "The Time Has Come For X-Ray Lithography", Proc. SPIE 0537, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV, (20 June 1985); https://doi.org/10.1117/12.947484
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