23 July 1985 Application Of A Contrast Enhancement Material To Broadband Projection Printing
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Proceedings Volume 0538, Optical Microlithography IV; (1985); doi: 10.1117/12.947750
Event: 1985 Microlithography Conferences, 1985, Santa Clara, United States
Abstract
A Contrast Enhancement Material (CEM), G.E. Altilith CEM-388, has been gaining acceptance on semiconductor fabrication lines using h line step-and-repeat systems. Although a bilevel system, the use of CEM-388 is relatively simple, and has shown significant increases in practical resolution when used at 405 nm. A considerable advantage may also be gained by using this system with Micralign projection printers, especially in improving resolution over steps. This paper will present the practical aspects of using CEM-388 in such systems and illustrate the effects on resolution, step coverage, C.D. control, and wafer throughput. The presence and control of inhibition effects will also be discussed.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Edward K. Pavelchek, Vivian B. Valenty, Robert E. Williams,Jr., "Application Of A Contrast Enhancement Material To Broadband Projection Printing", Proc. SPIE 0538, Optical Microlithography IV, (23 July 1985); doi: 10.1117/12.947750; https://doi.org/10.1117/12.947750
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KEYWORDS
Photoresist materials

Semiconducting wafers

Photoresist developing

Aluminum

Optical lithography

Oxides

Printing

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