23 July 1985 Laser Based Critical Dimension Measurement System For Semiconductor Production
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Proceedings Volume 0538, Optical Microlithography IV; (1985); doi: 10.1117/12.947765
Event: 1985 Microlithography Conferences, 1985, Santa Clara, United States
Abstract
A laser based linewidth measurement system has been developed for measurement of critical dimensions on semiconductor wafers. The system meets both the accuracy and throughput requirements for micron and submicron semiconductor production requirements.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William G. Divens, William Bates Cole, "Laser Based Critical Dimension Measurement System For Semiconductor Production", Proc. SPIE 0538, Optical Microlithography IV, (23 July 1985); doi: 10.1117/12.947765; https://doi.org/10.1117/12.947765
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KEYWORDS
Semiconducting wafers

Scanning electron microscopy

Microscopes

Photoresist materials

Interference (communication)

Optical lithography

Semiconductor lasers

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