23 July 1985 Laser Based Critical Dimension Measurement System For Semiconductor Production
Author Affiliations +
Abstract
A laser based linewidth measurement system has been developed for measurement of critical dimensions on semiconductor wafers. The system meets both the accuracy and throughput requirements for micron and submicron semiconductor production requirements.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William G. Divens, William Bates Cole, "Laser Based Critical Dimension Measurement System For Semiconductor Production", Proc. SPIE 0538, Optical Microlithography IV, (23 July 1985); doi: 10.1117/12.947765; https://doi.org/10.1117/12.947765
PROCEEDINGS
7 PAGES


SHARE
RELATED CONTENT

Positive Photoresists As Ion Implantation Masks
Proceedings of SPIE (July 17 1979)
Increasing The Functional Speed Of Positive Photoresist
Proceedings of SPIE (August 08 1977)
Is it possible to improve MEEF?
Proceedings of SPIE (July 30 2002)
Dose and focus estimation using top-down SEM images
Proceedings of SPIE (June 02 2003)

Back to Top