23 July 1985 Polarized Laser Scan Technique For Patterned Wafer Surface Contaminants Inspection
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Abstract
A new system for detecting contaminants on patterned Si wafers is described. The system employs a linearly polarized He-Ne laser light to scan obliquely across the wafer surfaces, and optical detection technique to distinguish the contaminants from the patterns by measuring the polarization of the light reflected from both the contaminants and the patterns.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mitsuyoshi Koizumi, Mitsuyoshi Koizumi, Nobuyuki Akiyama, Nobuyuki Akiyama, "Polarized Laser Scan Technique For Patterned Wafer Surface Contaminants Inspection", Proc. SPIE 0538, Optical Microlithography IV, (23 July 1985); doi: 10.1117/12.947770; https://doi.org/10.1117/12.947770
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