18 April 1985 A Novel, High Contrast Positive Photoresist System
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Abstract
For the past several years the trend in VLSI technology has been toward attaining higher and higher pattern densities, which requires the ability to print him and smaller geometries over steps. Concurrently, the increasing use of step and repeat technology has allowed placing less emphasis on throughput and more on process control. It has been predicted that the ability to achieve contrasts during processing of greater than 5 would allow wet processing to give more nearly vertical wall angles and minimize the variation in linewidth over steps. This paper will discuss one such system having a contrast value greater than 10, demonstrating the strengths and weakness of such a material. This system has shown the capability of patterning less than 0.5μm features on planar substrates at full film thickness and substantial exposure latitude, with reduced linewidth variation over steps as compared to more conventional materials. The impact of various processing parameters will be discussed, including agitation and temperature. The ability of this system to generate a lift-off profile in one step will also be examined.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard E. Hopla, Richard E. Hopla, Andrew J. Blakeney, Andrew J. Blakeney, Paulette D. Wright, Paulette D. Wright, } "A Novel, High Contrast Positive Photoresist System", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); doi: 10.1117/12.947847; https://doi.org/10.1117/12.947847
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