A comparative study on the lithographic behavior of this azide-phenolic resin resist in deep UV and electron beam exposures is presented in this paper. Despite the broadening of resist line base exposed to electron beam, its submicron resolution capability and sensi-tivity of ≈16 μC/cm2 are demonstrated. This system offers image profile variations in deep UV exposure mode through controlled exposure and development conditions. Excellent linewidth control of ± 0.1 micrometers was obtained with adequate development latitude and high thermal and plasma resistance. Preliminary results also showed the feasibility of using 0.5-0.6 micrometer coatings of this resist as a high resolution conformable mask in multilevel systems.
Medhat A. Toukhy,
"An Aqueous Developable Deep UV/Electron Beam Negative Resist", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); doi: 10.1117/12.947825; https://doi.org/10.1117/12.947825