18 April 1985 Azide-Phenolic Resin Resists Sensitive To Visible Light
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Proceedings Volume 0539, Advances in Resist Technology and Processing II; (1985); doi: 10.1117/12.947834
Event: 1985 Microlithography Conferences, 1985, Santa Clara, United States
Abstract
Two kinds of negative photoresists, MRL(N) and MRG have been obtained by sensitizing poly-vinylphenol with aromatic azides synthesized by condensing isophorone with p-azidobenz-aldehyde and p-azidocinnamaldehyde. The sensitivity of MRG to g line (436 nm), expressed by the dose necessary for 50 % film thickness to remain on the substrate after development (D1°) is 55 mJ/cm2. MRL(N) is less sensitive to g line than MRG, however, its ID" value to i line (365 nm) is 13 mJ/cm2. Both resists do not swell in aqueous alkaline developer, and conse-quently have high resolution capability. The quantum efficiency of photodecomposition of azide has been determined. The values ranged from 0.10 to 0.24. The photoinsolubilization of resist is considered to be mainly due to the increase in molecular weight of polyvinylphenol by the recombination of polymer radicals with each other.
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Saburo Nonogaki, Michiaki Hashimoto, Takao Iwayanagi, Hiroshi Shiraishi, "Azide-Phenolic Resin Resists Sensitive To Visible Light", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); doi: 10.1117/12.947834; https://doi.org/10.1117/12.947834
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KEYWORDS
Polymers

Quantum efficiency

Visible radiation

Absorption

Argon

Mass attenuation coefficient

Photoresist materials

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