18 April 1985 High Temperature Positive Photoresist For Use On Reflective Topography And Sputter Applications
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Abstract
A phenolic resist system was formulated with a selected anti-reflective dye tuned for use with stepper exposure equipment in the 400-436 nm region. High exposure latitude and better than 1.25 micrometer resolution were demonstrated over highly reflective aluminized topography. Excellent 200oC. resist image stability was enhanced by deep UV treatment to endure prolonged heating at 400°C. It is felt that this resist is a good candidate for use in high temperature processes such as sputtering applications.
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M. Toukhy, M. Toukhy, S. Tadros, S. Tadros, C. Guglielmo, C. Guglielmo, } "High Temperature Positive Photoresist For Use On Reflective Topography And Sputter Applications", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); doi: 10.1117/12.947818; https://doi.org/10.1117/12.947818
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