18 April 1985 Improvements To The Dry-Etch Resistance Of Sensitive Positive-Working Electron Resists
Author Affiliations +
Abstract
A positive-working electron resist, poly-(methacryloyl chloride), which has sensitivity ≈5 μC/cm2 at 20 keV is described. The resist is slightly more resistant to erosion in a carbon tetrachloride-based plasma than is poly-(methyl methacrylate). Its erosion rate in the plasma can be further reduced by treating developed film patterns with suitable reagents to introduce into the resist structure aromatic groups or metals. Erosion rates can be reduced to values near those of negative resists containing aromatic groups.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Edward D. Roberts, "Improvements To The Dry-Etch Resistance Of Sensitive Positive-Working Electron Resists", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); doi: 10.1117/12.947824; https://doi.org/10.1117/12.947824
PROCEEDINGS
7 PAGES


SHARE
Back to Top