Paper
18 April 1985 Optical Positive Resist Processing. II. Experimental And Analytical Model Evaluation Of Process Control.
Michael P.C. Watts, M.Richard Hannifan
Author Affiliations +
Abstract
A new analytical model of the exposure and development of optical positive resists is used to quantitatively evaluate process control. Using this model, a new method is described that allows for the rapid extraction of the characteristics parameters that describe the exposure and development of resists. Characteristic parameters were measured for AZ 1300SF in two concentrations of AZ 351 and AZ developers, respectively. Line width variations that would result from specific process variations were calculated for the different developers. It is clearly shown that dilute developers operating at optimal exposure doses give the best control.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael P.C. Watts and M.Richard Hannifan "Optical Positive Resist Processing. II. Experimental And Analytical Model Evaluation Of Process Control.", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); https://doi.org/10.1117/12.947810
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Process control

Data modeling

Photoresist materials

Photoresist developing

Semiconducting wafers

Image quality

Systems modeling

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