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18 April 1985 Plasma Performance Of Positive Resist Systems Using Spin-On Antireflective Coatings In Cl2/Sf6, Chf3/O2 And Cc14 Plasmas
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Abstract
Linewidth control and resolution have become increasingly more difficult for optical lithography in the one micron region because of reflective substrates and severe topography. Recently, much attention has been given to spin-on Antiretlective Coatings (ARC) as an easily implemented solution to standing waves and scattered reflections. This leads to improved linewidth control and better resolution for the same aligner and resist system. This paper investigates ARC undercutting and its effect on the final etched image for popular anisotropic plasmas as used to etch polysilicon gates, silox contact holes, and aluminium interconnections. Brewer ARC-PN4, ARC-PN2, and Waycoat 204 positive photoresist were used and imaged using a THE 800-SLR 10X stepper. It was found that final etched features were insensitive to spin-on ARC baking and developing conditions making this a useful technique for production in the one micron region.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Geoffrey A. Hungerford and William J.O. Boyle "Plasma Performance Of Positive Resist Systems Using Spin-On Antireflective Coatings In Cl2/Sf6, Chf3/O2 And Cc14 Plasmas", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); https://doi.org/10.1117/12.947838
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