18 April 1985 Plasma Tailoring Of Photoresist For High Performance Mixer Diodes
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Abstract
An oxygen plasma assisted photoresist process has been developed to allow fabrication of reliable, high performance, low noise GaAs mixer diodes. Plasma tailoring of the photo-resist solved two critical processing problems. Plasma processing of the photoresist was repeatable and required minimal additional processing time. A matrix array of diodes having diameters from 1.5 to 5.0 microns were fabricated. Devices, having excellent ideality factors and low series resistance, were produced. Noise figures as low as 3.5 dB at 60 GHz were observed, and the devices were capable of withstanding temperature stress in excess of 300°C for an extended period of time.
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H. M. Harris, H. M. Harris, G. N. Hill, G. N. Hill, N. W. Cox, N. W. Cox, } "Plasma Tailoring Of Photoresist For High Performance Mixer Diodes", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); doi: 10.1117/12.947848; https://doi.org/10.1117/12.947848
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