18 April 1985 Silicon-Containing Resists For Bi-Layer Resist Systems
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Abstract
Several kinds of silicon-containing resist materials for bi-layer resist systems devel-oped in our' Laboratories are reported. For negative working resists, poly(trimethylsilylstyrene-co-chloromethylstyrene) ( P(SiSt-CMS) ) and a mixture of poly(triallylphenylsilane) with bisazide ( TAS ) have been developed. P(SiSt-CMS) was designed for EB or deep UV exposure. TAS suits to use in near UV lithographic tools. For positive working resists, SIPR (a partly trimethylsilyl-methylated resorcinol-formaldehyde resin mixed with naphthoquinonediazide) was developed. Syntheses, lithographic data and applications to bi-layer systems of these resists are given.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Ohnishi, Y. Ohnishi, M. Suzuki, M. Suzuki, K. Saigo, K. Saigo, Y. Saotome, Y. Saotome, H. Gokan, H. Gokan, } "Silicon-Containing Resists For Bi-Layer Resist Systems", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); doi: 10.1117/12.947816; https://doi.org/10.1117/12.947816
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