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18 April 1985 Submicron Optical Lithography Utilizing A Negative Deep UV Resist MRS
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Abstract
A negative deep UV resist MRS is successfully applied to 1:1 projection printings. The MRS has high resolution capability due to the absence of swelling in the developer, and resolves 1 μm patterns. Because of its intense absorption characteristics, the MRS is insensitive to variation in underlayer reflectivity, so the linewidth of the surface part of the MRS is well controlled. A further consequence is image profile variation depending on development 'conditions and resist thickness over steps. Anisotropic etching with high selectivity to resist may mitigate this effect. We are currently applying the MRS to obtain 1 pm-thick Al-Cu-Si metallization patterns realizing 1.5 μm spaces over 0.7 μm stepped substrates by the use of reactive ion etching. The MRS is reliable enough to apply to a single-layer resist process for production of 1.0 μm - 1.5 μm feature size devices. It is found that, using the MRS as a top layer for a tri-layer resist structure, 0.7 μm line and space patterns can be obtained with 1:1 deep UV projection printing. In our tri-layer resist process, the surface part of the MRS acts as a mask to etch the second thin SiO layer, which becomes the final mask pattern of the polymer bottom layer. The MRS tri-layer resist process has excellent resolution and controllability of linewidth compared with that of conventional positive resists.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideki Tomioka "Submicron Optical Lithography Utilizing A Negative Deep UV Resist MRS", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); https://doi.org/10.1117/12.947828
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