20 November 1985 Gallium Arsenide Photocathode For The Free Electron Laser
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Proceedings Volume 0540, Southwest Conf on Optics '85; (1985) https://doi.org/10.1117/12.976122
Event: 1985 Albuquerque Conferences on Optics, 1985, Albuquerque, United States
Abstract
The efforts of the FEL source have been concentrated on cesiated GaAs(100) wafers. These crystals have shown photoyield of <.1 - 9 percent quantum efficiency with the cesium and oxygen treatment. The work function and coverage curves exhibit the same properties as measured in the literature. The use of Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy have been instrumental in determining the surface cleanliness and the surface oxidation states. The sputtered surfaces have been investigated as a function of rare gas mass and sputter ion voltage, giving similar results to earlier literature values. Temperature annealing appears to be critical after sputter cleaning in achieving any significant photoyield. Contacts of Ag-Mn and Ni-Si have been deposited, heated, and analyzed using Auger Depth Profiling techniques.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. C. Stotlar, S. C. Stotlar, R. W. Springer, R. W. Springer, B. Sherwood, B. Sherwood, R. Cordi, R. Cordi, } "Gallium Arsenide Photocathode For The Free Electron Laser", Proc. SPIE 0540, Southwest Conf on Optics '85, (20 November 1985); doi: 10.1117/12.976122; https://doi.org/10.1117/12.976122
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