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20 November 1985 Ion Beam Assisted Deposition Of Optical Thin Films - Recent Results
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Proceedings Volume 0540, Southwest Conf on Optics '85; (1985)
Event: 1985 Albuquerque Conferences on Optics, 1985, Albuquerque, United States
We have examined the properties of dielectric (Ti02, Si02, -Al203, Ta205 and Hf02) films deposited using ion-assisted deposition (IAD). The films were characterized using an angularly resolved scatterometer, spectrophotometer and Raman spectroscopy. A reduction in optical scatter, especially that due to low spatial frequencies, is observed for films deposited with simultaneous ion bombardment. Higher values of refractive index are obtained for films deposited using IAD. Raman spectra indicate a crystalline phase change in TiO2 films is induced by bombardment of samples with 02 ions during deposition. Other experimental data and the effects of the induced phase transition on the optical properties of TiO2 will be discussed.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. J. McNally, G. A. Al-Jumaily, S. R. Wilson, and J. R. McNeil "Ion Beam Assisted Deposition Of Optical Thin Films - Recent Results", Proc. SPIE 0540, Southwest Conf on Optics '85, (20 November 1985);

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