Laser-Induced Photochemical Dry Etching Of III-V Compound Semiconductors

C. I.H. Ashby

doi:10.1117/12.976153

20 November 1985 Laser-Induced Photochemical Dry Etching Of III-V Compound Semiconductors

C. I.H. Ashby

Proceedings Volume 0540, Southwest Conf on Optics '85; (1985) https://doi.org/10.1117/12.976153
Event: 1985 Albuquerque Conferences on Optics, 1985, Albuquerque, United States

Abstract

There is a great need for anisotropy and selectivity in dry etching processes used for III-V semiconductor device fabrication. We have developed a laser-induced photochemical dry etching process which can provide both anisotropy without ion-induced lattice damage and a level of material and dopant selectivity unattainable with current plasma etching processes. Low intensity light with photon energy greater than the band gap of the material drives the photochemical process through photogeneration of electrons and holes. The requirement of photons with energy greater than or equal to the band gap permits total selectivity between materials of different band gaps, such as GaAs and GaP. The voltage-dependent behavior of the photogenerated carrier permits selective etching of p-GaAs versus n-GaAs and selectivity among n-GaAs materials with different doping levels.

Citation Download Citation

C. I.H. Ashby "Laser-Induced Photochemical Dry Etching Of III-V Compound Semiconductors", Proc. SPIE 0540, Southwest Conf on Optics '85, (20 November 1985); https://doi.org/10.1117/12.976153

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