28 October 1985 High-speed Lateral Photodetectors On Semi-Insulating InGaAs and InP
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Proceedings Volume 0545, Optical Technology for Microwave Applications II; (1985) https://doi.org/10.1117/12.948336
Event: 1985 Technical Symposium East, 1985, Arlington, United States
Abstract
A new type of high-performance, planar PIN photodetector operating in the 1.0-1.6 μm wavelength region has been fabricated on semi-insulating InP and InGaAs entirely by formation of alloyed contacts. Their planar geometry and simple fabrication process, that does not require a separate step to form the junction, together with their high speed under reverse bias (FWHM . 50 ps) and sensitivity (n ≈ 40% at λ = 1.24μm, without anti-reflection coating) make these devices attractive for integration with FETs and for photodetector arrays.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. Diadiuk, V. Diadiuk, S. H. Groves, S. H. Groves, } "High-speed Lateral Photodetectors On Semi-Insulating InGaAs and InP", Proc. SPIE 0545, Optical Technology for Microwave Applications II, (28 October 1985); doi: 10.1117/12.948336; https://doi.org/10.1117/12.948336
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