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20 December 1985 Effects Of Impurity On The IR Absorption Bands Of Si-H Centers
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Proceedings Volume 0553, Fourier and Computerized Infrared Spectroscopy; (1985) https://doi.org/10.1117/12.970897
Event: 1985 International Conference on Fourier and Computerized Infrared Spectroscopy, 1985, Ottawa, Canada
Abstract
The IR bands in N-type and P-type floating-zone silicon grown in hydrogen atmosphere before and after neutron irradiation have been studied using FT-IR spectroscopy. The effects of impurity on the IR bands of Si-H centers have been observed.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Du Yongchang, Zhang Yufeng, and Weng Shifu "Effects Of Impurity On The IR Absorption Bands Of Si-H Centers", Proc. SPIE 0553, Fourier and Computerized Infrared Spectroscopy, (20 December 1985); https://doi.org/10.1117/12.970897
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