20 December 1985 Infrared Studies Of Acceptors In Gallium-Arsenide
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Proceedings Volume 0553, Fourier and Computerized Infrared Spectroscopy; (1985) https://doi.org/10.1117/12.970886
Event: 1985 International Conference on Fourier and Computerized Infrared Spectroscopy, 1985, Ottawa, Canada
Abstract
The ls-2p electronic intrasite transitions and local vibrational modes (LVM) of impurities and defects in GaAs are studied in FTIR transmission spectroscopy. These features are observed in as-grown samples and in samples which have been compensated by irradiation with 2 MeV electrons. The position of the Fermi level is monitored by observing the lowest energy ls-2p transition.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. J. Moore, W. J. Moore, B. V. Shanabrook, B. V. Shanabrook, } "Infrared Studies Of Acceptors In Gallium-Arsenide", Proc. SPIE 0553, Fourier and Computerized Infrared Spectroscopy, (20 December 1985); doi: 10.1117/12.970886; https://doi.org/10.1117/12.970886
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