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19 November 1985 Domain Inversion Effects in Ti - LiNbO3 Integrated Optical Devices
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Optical domain inversion effects on the performance of electro-optic devices in Ti-indiffused C-cut LiNbO3 are studied. The C- surface was found to be considerably more immune to domain inversion than the C+ surface under similar diffusion conditions. The extent of domain inversion was found to depend on the diffusion temperature, time, initial Ti film thickness and waveguide width. Lower electro-optically induced phase mod lation was observed in the drive voltage in Mach-Zehnder interferometers fabricated on C-1- substrates compared to that of C- substrates under the same voltage drive. The increase in crosstalk levels and change in the switching behavior of directional couplers attributable to domain inversion are also discussed.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Thaniyavarn, T. Findakly, D. Booher, and J. Moen "Domain Inversion Effects in Ti - LiNbO3 Integrated Optical Devices", Proc. SPIE 0559, Fiber Optics: Short-Haul and Long-Haul Measurements and Applications III, (19 November 1985);

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