10 May 1986 Direct, Maskless Fabrication Of Submicrometer Gratings On Semiconductors
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Abstract
Ultrahigh-resolution gratings are produced in GaAs crystals by using two interfering beams to initiate localized chemical reactions at the solid/liquid interface. Optical gratings with periods between 0.1 and 1 }im are produced with controllable and reproducible optical properties. This maskless technique has potential applications in the fabrication of distributed feedback lasers. Futhermore, a variety of groove profiles are made under different etching conditions. A novel aspect of the direct processing is that the grating growth can be monitored in real time by observing the diffraction of the writing beams, thus allowing a precise control over the grating depth and groove profiles. In addition, because the gratings have a very high resolution, the process of grating fabrication becomes a method of studying the micrometer-scale physical processes which influence the grating structure and growth.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dragan V. Podlesnik, Dragan V. Podlesnik, Heinz H. Gilgen, Heinz H. Gilgen, Richard M. Osgood, Richard M. Osgood, } "Direct, Maskless Fabrication Of Submicrometer Gratings On Semiconductors", Proc. SPIE 0560, Diffraction Phenomena in Optical Engineering Applications, (10 May 1986); doi: 10.1117/12.949618; https://doi.org/10.1117/12.949618
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