10 May 1986 Direct, Maskless Fabrication Of Submicrometer Gratings On Semiconductors
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Ultrahigh-resolution gratings are produced in GaAs crystals by using two interfering beams to initiate localized chemical reactions at the solid/liquid interface. Optical gratings with periods between 0.1 and 1 }im are produced with controllable and reproducible optical properties. This maskless technique has potential applications in the fabrication of distributed feedback lasers. Futhermore, a variety of groove profiles are made under different etching conditions. A novel aspect of the direct processing is that the grating growth can be monitored in real time by observing the diffraction of the writing beams, thus allowing a precise control over the grating depth and groove profiles. In addition, because the gratings have a very high resolution, the process of grating fabrication becomes a method of studying the micrometer-scale physical processes which influence the grating structure and growth.
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Dragan V. Podlesnik, Dragan V. Podlesnik, Heinz H. Gilgen, Heinz H. Gilgen, Richard M. Osgood, Richard M. Osgood, } "Direct, Maskless Fabrication Of Submicrometer Gratings On Semiconductors", Proc. SPIE 0560, Diffraction Phenomena in Optical Engineering Applications, (10 May 1986); doi: 10.1117/12.949618; https://doi.org/10.1117/12.949618

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