2 December 1985 Sputtered In2O3:Sn films: Preparation and optical properties
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Abstract
We prepared In2O3:Sn coatings by reactive dc magnetron sputtering. At a substrate tem-perature of 300-400°C and a deposition rate of ~ 0.8 nm/s we could obtain transparent films with - 4% normal luminous absorptance, - 88% normal thermal reflectance, and - 3 x 10-4 Ωcm electrical dc resistivity. Spectrophotometric measurements were used to evaluate the complex dynamic resistivity. It could be reconciled with the Gerlach-Grosse theory for a gas of free electrons damped by ionized impurity scattering.
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S.-J . Jiang, C. G. Granqvist, "Sputtered In2O3:Sn films: Preparation and optical properties", Proc. SPIE 0562, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion IV, (2 December 1985); doi: 10.1117/12.966297; https://doi.org/10.1117/12.966297
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