Sputtered In2O3:Sn films: Preparation and optical properties

S.-J . Jiang; C. G. Granqvist

doi:10.1117/12.966297

2 December 1985 Sputtered In₂O₃:Sn films: Preparation and optical properties

S.-J . Jiang, C. G. Granqvist

Proceedings Volume 0562, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion IV; (1985) https://doi.org/10.1117/12.966297
Event: 29th Annual Technical Symposium, 1985, San Diego, United States

Abstract

We prepared In₂O₃:Sn coatings by reactive dc magnetron sputtering. At a substrate tem-perature of 300-400°C and a deposition rate of ~ 0.8 nm/s we could obtain transparent films with - 4% normal luminous absorptance, - 88% normal thermal reflectance, and - 3 x 10^-4 Ωcm electrical dc resistivity. Spectrophotometric measurements were used to evaluate the complex dynamic resistivity. It could be reconciled with the Gerlach-Grosse theory for a gas of free electrons damped by ionized impurity scattering.

Citation Download Citation

S.-J . Jiang and C. G. Granqvist "Sputtered In₂O₃:Sn films: Preparation and optical properties", Proc. SPIE 0562, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion IV, (2 December 1985); https://doi.org/10.1117/12.966297

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