2 December 1985 Theoretical Model For The Optical Properties Of In2O3: Sn Films In The 0.3-50-µm range
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Abstract
We formulate a detailed theoretical model for the optical properties of heavily dopQd oxide semiconductors. The complex dielectric function is expressed as ε = 1+χVEFCPH, where the χs are susceptibilities due to valence electrons (VE), free carriers (FC), and polar optical phonons (PH). We obtained χVE by including a wavelength-shifted Urbach tail of the direct semiconductor transition. χFC was calculated from the Gerlach-Grosse theory and accounting for screening of point-like ions within the Random Phase Approximation. Pseudo-potential scattering as well as exchange and correlation effects in the electron gas were considered. χPH was specified through emipirically determined damped Lorentz oscillators. The model was applied to In203:Sn coatings and used to compute their integrated luminous, solar and thermal properties. Optimization of thickness and electron density yielded single coatings on glass with 78% normal solar transmittance and 20% hemispherical thermal emittance.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. Hamberg and C. G . Granqvist "Theoretical Model For The Optical Properties Of In2O3: Sn Films In The 0.3-50-µm range", Proc. SPIE 0562, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion IV, (2 December 1985); doi: 10.1117/12.966298; https://doi.org/10.1117/12.966298
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