2 January 1986 Analysis of Defects in Single Level Conducting Films
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Abstract
The defect density of the metal layers in a double level metal process was studied. The dominant failure mode, with positive photoresist, was found to be intra-level metal shorts caused by particulate contamination. The major particle source was found to be deposited oxides used as dielectrics. Our processing environment, metal deposition process and lithography process were found to be relatively minor contributors.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. R. Allen, T. A. Brunner, R. P. Bane, "Analysis of Defects in Single Level Conducting Films", Proc. SPIE 0565, Micron and Submicron Integrated Circuit Metrology, (2 January 1986); doi: 10.1117/12.949742; https://doi.org/10.1117/12.949742
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