2 January 1986 Correlation Of Submicron Linewidths Derived From Electrical And Electron-Optical Methods.
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Abstract
An electrical probe technique is used to measure the widths of doped polysilicon structures. The measured values are compared to those obtained with a low-voltage SEM. This is done for widths in the micron to submicron range. A correlation is performed and various accuracies reported.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael T. Reilly, Michael T. Reilly, } "Correlation Of Submicron Linewidths Derived From Electrical And Electron-Optical Methods.", Proc. SPIE 0565, Micron and Submicron Integrated Circuit Metrology, (2 January 1986); doi: 10.1117/12.949745; https://doi.org/10.1117/12.949745
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