2 January 1986 Electrical Measurements of Sidewall Spacer Dimensions
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Abstract
A whole wafer measurement method was developed to measure submicron oxide spacer dimensions. The technique offers the capability to evaluate the glass deposition and etchback processes used to form the spacers. Lateral diffusion of implanted layers can also be measured with this method. Measured spacer-width values agree well with measurements from SEM micrographs. Results show that the precision of this technique is presently limited by electrical probing accuracy and reticle fabrication.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. W. Bril, T. W. Bril, J. M. De Blasi, J. M. De Blasi, L. Gutai, L. Gutai, M. Chu, M. Chu, } "Electrical Measurements of Sidewall Spacer Dimensions", Proc. SPIE 0565, Micron and Submicron Integrated Circuit Metrology, (2 January 1986); doi: 10.1117/12.949741; https://doi.org/10.1117/12.949741
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