Focused-Beam Vs. Conventional Bright-Field Scanning Microscopy For Integrated Circuit Metrology

D. Nyyssonen

doi:10.1117/12.949739

2 January 1986 Focused-Beam Vs. Conventional Bright-Field Scanning Microscopy For Integrated Circuit Metrology

D. Nyyssonen

Proceedings Volume 0565, Micron and Submicron Integrated Circuit Metrology; (1986) https://doi.org/10.1117/12.949739
Event: 29th Annual Technical Symposium, 1985, San Diego, United States

Abstract

Current optical instrumentation being developed for critical dimension measurements in the integrated circuit industry is following one of two very different optical designs, i.e., either a focused laser beam which scans the wafer or the more conventional bright-field microscope. Traditional optical design lore has described these systems as "equivalent" based on the principle of reciprocity. More recent research has shown"- that the responses of these two types of systems are not equivalent for imaging of structures patterned in thin films such as those found in integrated circuit wafer fabrication. This lack of reciprocity is the result of the dependence of the diffraction pattern on the angle of incidence of the illumination. The impact of the lack of reciprocity on the design and calibration of critical dimension measurement systems is discussed.

Citation Download Citation

D. Nyyssonen "Focused-Beam Vs. Conventional Bright-Field Scanning Microscopy For Integrated Circuit Metrology", Proc. SPIE 0565, Micron and Submicron Integrated Circuit Metrology, (2 January 1986); https://doi.org/10.1117/12.949739

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