2 January 1986 Hitachi S-6000 Field Emission CD-Measurement SEM
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Abstract
We have developed the Model S-6000 for critical dimension measurement of circuit patterns on VLSI wafers utilizing a filed emission electron source. This instrument has been designed to handle up to a 6" wafer. Measurements are made under low voltage operation, at a high resolving power and at a flicker-free TV-scan rate. Minimum dose feature protects the wafer under measurement from electron beam damage. The S-6000 is a state-of-the-art CD measurement, SEM for quality control of in-process wafers.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Ohtaka, S. Saito, T. Furuya, O. Yamada, "Hitachi S-6000 Field Emission CD-Measurement SEM", Proc. SPIE 0565, Micron and Submicron Integrated Circuit Metrology, (2 January 1986); doi: 10.1117/12.949752; https://doi.org/10.1117/12.949752
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