4 March 1986 High-speed Intensity-Dependent Refractive Index In Semiconductor-Doped Glasses
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Abstract
We report experiments on the magnitude and speed of optical-field induced changes in the refractive index of semiconductor-doped color-filter glasses. A large third-order nonlinear susceptibility of 10-13 to10-14m2/W is measured with a response time of tens of picoseconds. Low-loss (planar and channel) optical waveguides have been fabricated by ion-exchange in these glasses.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. T. Seaton, C. T. Seaton, G. I. Stegenan, G. I. Stegenan, S. S. Yao, S. S. Yao, C. Karaguleff, C. Karaguleff, R. Fortenberry, R. Fortenberry, A. Gabel, A. Gabel, W. Banyai, W. Banyai, G. Assanto, G. Assanto, } "High-speed Intensity-Dependent Refractive Index In Semiconductor-Doped Glasses", Proc. SPIE 0567, Advances in Materials for Active Optics, (4 March 1986); doi: 10.1117/12.949843; https://doi.org/10.1117/12.949843
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