It is projected that advanced second generation IR systems will use hybrid focal plane arrays consisting of PV HgCdTe detector arrays and silicon CCD signal processor chips. This choice is in concert with the aim of achieving lower NEAT and finer spatial resolution. PV HgCdTe detector arrays have been selected because of power consumption constraints and CCD processor characteristics. In this paper we report on a CCD signal processor chip intended for coupling with PV detector arrays to form advanced second generation IR focal plane arrays. Measurements reveal excellent (4mV RMS) threshold uniformity and the charge division measured noise was less than 200e-.