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23 February 1985 Short Wavelength Responsivity Improvement and Long Wavelength Responsivity Degradation in Photodiodes as a Result of Gamma Irradiation
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Abstract
Changes in surface and bulk properties of UDT-05D photodiodes as a result of 1.3 Mrad γ-irradiation are compared. As suspected by previous investiagors but not verified until now, changes in surface properties are seen experimentally to alter significantly overall device characteristics. Changes in device properties include increasesin surface conductivity, improved quantum efficiency at visible wavelengths, decreased dark current at very low reverse bias, decreased infrared response, decreased minority carrier lifetime, and decreased n. The first three results are new and permit differentiation between surface and bulk effects. A model consistent with all these measurements to explain the changes is presented. The model is based upon γ-ray photodesorption of surface impurities.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. S. Kopeika, S. Hava, and O. Meroham "Short Wavelength Responsivity Improvement and Long Wavelength Responsivity Degradation in Photodiodes as a Result of Gamma Irradiation", Proc. SPIE 0572, Infrared Technology XI, (23 February 1985); https://doi.org/10.1117/12.950679
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