11 September 1985 Effects Of Annealing On The Optical Properties Of Proton Irradiated n-type Gallium Arsenide
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Proceedings Volume 0578, Integrated Optical Circuit Engineering II; (1985) https://doi.org/10.1117/12.950755
Event: 1985 Cambridge Symposium, 1985, Cambridge, United States
Abstract
The optical properties of proton irradiated n-type GaAs, implanted at room temperature and subsequently furnace annealed, are examined using infrared reflectance spectroscopy. Substantial changes in the reflectance spectra are observed with post-implantation annealing. Computer simulations , based on a Drude model free carrier contribution to the dielectric constant, are used to obtain best fit parameters to the measured spectra. The resulting free carrier profiles display a two layer characteristic. The top layer encompasses the implanted region and remains stable with thermal treatment up to 500 C. A lower layer appears with annealing at 200 C and diffuses deeply into the substrate material. Further annealing eliminates the lower layer but the top layer is present even after a 600 C anneal. An activation energy of 1.2 eV and a diffusion preexponential factor of 4.3 E-1 cm2/s are found for this process.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. L. Liou, W. G. Spitzer, J. M. Zavada, H. A. Jenkinson, "Effects Of Annealing On The Optical Properties Of Proton Irradiated n-type Gallium Arsenide", Proc. SPIE 0578, Integrated Optical Circuit Engineering II, (11 September 1985); doi: 10.1117/12.950755; https://doi.org/10.1117/12.950755
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