9 July 1986 1.3µm Low Threshold Distributed Feedback Lasers For High Bit-Rate Applications
Author Affiliations +
Proceedings Volume 0587, Fiber Optic Sources and Detectors; (1986) https://doi.org/10.1117/12.951198
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France
Abstract
A low threshold current (≈30 mA) 1.3µm (InGaAsP) second order DFB laser with a ridge structure made by liquid phase epitaxy is reported. The low threshold results from : optimized heterostructure and grating profile, good tuning of the DFB wavelength with the peak gain wavelength, and the proper LPE regrowth conditions on the grating.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Artigue, C. Artigue, Y. Louis, Y. Louis, C. Padioleau, C. Padioleau, F. Poingt, F. Poingt, D. Sigogne, D. Sigogne, C. Starck, C. Starck, J. Benoit, J. Benoit, } "1.3µm Low Threshold Distributed Feedback Lasers For High Bit-Rate Applications", Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); doi: 10.1117/12.951198; https://doi.org/10.1117/12.951198
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT

l.3um InGaAsP/InP DCC Structure Semiconductor Laser
Proceedings of SPIE (February 06 1989)
Planar waveguides in YLF grown by liquid phase epitaxy
Proceedings of SPIE (March 30 1997)
Visible Semiconductor Lasers
Proceedings of SPIE (May 18 1989)
Improved Performance Buried Heterostructure Window Lasers
Proceedings of SPIE (August 08 1988)

Back to Top