9 July 1986 Direct Measurement Of Leakage Currents In Long-Wavelength Buried Heterostructure Lasers
Author Affiliations +
Proceedings Volume 0587, Fiber Optic Sources and Detectors; (1986) https://doi.org/10.1117/12.951195
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France
Abstract
A number of modified DCPBH laser devices were realized, which can be driven as a single transistor (or as a number of parallel transistors). The devices allow direct and seperate measurement of various leakage components in DCPBH devices, i.e. electron- c.q. hole-hetero-barrier leakage and blocking layer leakage. Measurements on these devices lead to a good understanding of leakage phenomena and of device performance of DCPBH laser diodes. Measured data serve as input for accurate modelling of DCPBH devices.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. I. Kuindersma, P. I. Kuindersma, A. Valster, A. Valster, } "Direct Measurement Of Leakage Currents In Long-Wavelength Buried Heterostructure Lasers", Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); doi: 10.1117/12.951195; https://doi.org/10.1117/12.951195
PROCEEDINGS
3 PAGES


SHARE
Back to Top