9 July 1986 Emission and detection in the 1 to 3 µm spectral range with Hgl-xCdxTe diodes
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Proceedings Volume 0587, Fiber Optic Sources and Detectors; (1986) https://doi.org/10.1117/12.951214
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France
The main physical properties of the Hgl-xCdxTe alloys are presented with some special features (matching of bandgap and spin orbit energies). Experimental measurement of life-time have been made on THM crystal with low doping levels. It is concluded that the dominant recombination mechanism is radiative. Hgl-xCdxTe photodiodes are described operating at various wavelengths such as 1.3-1.55-2.3 µm. These PIN and APD detectors exhibit high performances (low dark current, high hole/ electron ionization coefficient ratio, high RoA product). The capability of using Hgl-xCdxTe material for emitting devices has been investigated. The electroluminescence effect in PN junction has produced emission lines at 1.35 - 1.52 and 2.5 µm with interesting narrow linewidths.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. C. Flachet, J. C. Flachet, M. Royer, M. Royer, Y. Carpentier, Y. Carpentier, G. Pichard, G. Pichard, } "Emission and detection in the 1 to 3 µm spectral range with Hgl-xCdxTe diodes", Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); doi: 10.1117/12.951214; https://doi.org/10.1117/12.951214

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