Emission and detection in the 1 to 3 µm spectral range with Hgl-xCdxTe diodes

J. C. Flachet; M. Royer; Y. Carpentier; G. Pichard

doi:10.1117/12.951214

9 July 1986 Emission and detection in the 1 to 3 µm spectral range with Hg_l-xCd_xTe diodes

J. C. Flachet, M. Royer, Y. Carpentier, G. Pichard

Proceedings Volume 0587, Fiber Optic Sources and Detectors; (1986) https://doi.org/10.1117/12.951214
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France

Abstract

The main physical properties of the Hgl-xCdxTe alloys are presented with some special features (matching of bandgap and spin orbit energies). Experimental measurement of life-time have been made on THM crystal with low doping levels. It is concluded that the dominant recombination mechanism is radiative. Hgl-xCdxTe photodiodes are described operating at various wavelengths such as 1.3-1.55-2.3 µm. These PIN and APD detectors exhibit high performances (low dark current, high hole/ electron ionization coefficient ratio, high RoA product). The capability of using Hgl-xCdxTe material for emitting devices has been investigated. The electroluminescence effect in PN junction has produced emission lines at 1.35 - 1.52 and 2.5 µm with interesting narrow linewidths.

Citation Download Citation

J. C. Flachet, M. Royer, Y. Carpentier, and G. Pichard "Emission and detection in the 1 to 3 µm spectral range with Hg_l-xCd_xTe diodes", Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); https://doi.org/10.1117/12.951214

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