Monolithic Integration Of InGaAs PIN-FET : From simple concepts to an involved technology

M. Allovon; L. Nguyen; J. C. Renaud; P. Blanconnier; F. Heliot; A. Scavennec

doi:10.1117/12.951210

9 July 1986 Monolithic Integration Of InGaAs PIN-FET : From simple concepts to an involved technology

M. Allovon, L. Nguyen, J. C. Renaud, P. Blanconnier, F. Heliot, A. Scavennec

Proceedings Volume 0587, Fiber Optic Sources and Detectors; (1986) https://doi.org/10.1117/12.951210
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France

Abstract

The attractiveness of monolithic InGaAs PIN-FETs for high-speed, long haul optical transmissions at 1.3 -1,6 µm is presented. The requirements of monolithic integration of PIN photodiodes, junction FETs and biasing/feedback resistor are discussed and the fabrication process and operating characteristics of integrable PIN photodiodes and J-FETs grown by Molecular Beam Epitaxy 'are then given.

Citation Download Citation

M. Allovon, L. Nguyen, J. C. Renaud, P. Blanconnier, F. Heliot, and A. Scavennec "Monolithic Integration Of InGaAs PIN-FET : From simple concepts to an involved technology", Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); https://doi.org/10.1117/12.951210

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