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7 July 1986 Stressed Ge:Ga Photoconductor Technology
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Proceedings Volume 0588, Recent Developments in Materials & Detectors for the Infrared; (1986) https://doi.org/10.1117/12.951766
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France
Abstract
The technology of stress cell systems to accommodate gallium doped germanium photoconductors is presented. The novel feature of the cell is the inclusion of a miniaturized spring calibrated in situ. Stress control measurements were made at 4.2 K by optical and electrical photoconductor characterization.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Laverny, J. Leotin, C. Villarzel, and J. R. Birch "Stressed Ge:Ga Photoconductor Technology", Proc. SPIE 0588, Recent Developments in Materials & Detectors for the Infrared, (7 July 1986); https://doi.org/10.1117/12.951766
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