1 May 1986 Performance Of Large Area Particle Detectors
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Proceedings Volume 0591, Solid-State Imagers and Their Applications; (1986) https://doi.org/10.1117/12.952076
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France
Silicon charged particle detectors, made by a newly developed process, have been studied. Passivated ion-implanted junctions are fabricated in high resistivity FZ n-type Silicon, using planar technology. For many charged particle detector applications the sensitive volume of the diode has to be high : active areas of several cm2 and thicknesses of 100 to 500 micron are wanted. Diodes with a high breakdown voltage (100 to 500 volts) are required so that the full wafer thickness can be depleted. The diode leakage current has to be small (1-5 nA/cm2/100 μ ) for low noise, high resolution performance. An important parameter characterizing the performance of semiconductor detectors is the dead layer thickness caused by the shallow p junction. Various measurement and calculation techniques are compared and show that window thicknesses in the range of 50 nm can be readily obtained. Alpha-particle spectra are given to prove the superiority of these detectors over conventional Au-Si-Surface Barrier Detectors.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Burger, P. Burger, K. De Backker, K. De Backker, W. Schoenmaekers, W. Schoenmaekers, } "Performance Of Large Area Particle Detectors", Proc. SPIE 0591, Solid-State Imagers and Their Applications, (1 May 1986); doi: 10.1117/12.952076; https://doi.org/10.1117/12.952076

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