1 May 1986 Performance Of Large Area Particle Detectors
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Proceedings Volume 0591, Solid-State Imagers and Their Applications; (1986) https://doi.org/10.1117/12.952076
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France
Abstract
Silicon charged particle detectors, made by a newly developed process, have been studied. Passivated ion-implanted junctions are fabricated in high resistivity FZ n-type Silicon, using planar technology. For many charged particle detector applications the sensitive volume of the diode has to be high : active areas of several cm2 and thicknesses of 100 to 500 micron are wanted. Diodes with a high breakdown voltage (100 to 500 volts) are required so that the full wafer thickness can be depleted. The diode leakage current has to be small (1-5 nA/cm2/100 μ ) for low noise, high resolution performance. An important parameter characterizing the performance of semiconductor detectors is the dead layer thickness caused by the shallow p junction. Various measurement and calculation techniques are compared and show that window thicknesses in the range of 50 nm can be readily obtained. Alpha-particle spectra are given to prove the superiority of these detectors over conventional Au-Si-Surface Barrier Detectors.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Burger, P. Burger, K. De Backker, K. De Backker, W. Schoenmaekers, W. Schoenmaekers, "Performance Of Large Area Particle Detectors", Proc. SPIE 0591, Solid-State Imagers and Their Applications, (1 May 1986); doi: 10.1117/12.952076; https://doi.org/10.1117/12.952076
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