14 July 1986 Reflectivity of Silicon Carbide in the Extreme Ultraviolet
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Proceedings Volume 0597, X-Ray Instrumentation in Astronomy; (1986) https://doi.org/10.1117/12.966574
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France
We present reflectivity and scattering measurements on samples of silicon carbide manufactured by a variety of processes. Measurements were made from near normal to grazing incidence at wavelengths in the range of 114 to 1216 Å. Our findings confirm that CVD silicon carbide displays the highest reflectivity at EUV wavelengths and normal incidence. We also demonstrate that at grazing incidence, silicon rich samples show reflectivity cutoff identical to polycrystalline silicon. From the limited data available for single crystal material, we conclude that CVD material has comparable performance.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stanley Mrowka, Stanley Mrowka, Patrick Jelinsky, Patrick Jelinsky, Stuart Bowyer, Stuart Bowyer, Greg Sanger, Greg Sanger, W. J. Choyke, W. J. Choyke, } "Reflectivity of Silicon Carbide in the Extreme Ultraviolet", Proc. SPIE 0597, X-Ray Instrumentation in Astronomy, (14 July 1986); doi: 10.1117/12.966574; https://doi.org/10.1117/12.966574

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